- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 106A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 200 | N-Channel | - | 75V | 106A (Tc) | 7 mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | 5310pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 202A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 200 | N-Channel | - | 40V | 75A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 103A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 200 | N-Channel | - | 100V | 103A (Tc) | 11.6 mOhm @ 62A, 10V | 4V @ 250µA | 150nC @ 10V | 5380pF @ 25V | 10V | ±20V | 333W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 200 | N-Channel | - | 40V | 195A (Ta) | 1.75 mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 25V | 10V | ±20V | 380W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 24V 195A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 200 | N-Channel | - | 24V | 195A (Tc) | 1.65 mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | 7590pF @ 24V | 10V | ±20V | 300W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 24V 429A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK (7-Lead) | 0 | 200 | N-Channel | - | 24V | 240A (Tc) | 1 mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | 7700pF @ 19V | 10V | ±20V | 300W (Tc) |
