- Series :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 600V 6.8A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TO252-3 | 0 | 2500 | N-Channel | - | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | 10V | ±20V | 66W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 6.8A TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | 10V | ±20V | 66W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 550V 7.1A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TO252-3 | 0 | 2500 | N-Channel | - | 550V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 10V | ±20V | 66W (Tc) | ||||
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7,500
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 9.4A | 8-PowerTDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | POWERDI5060-8 | 0 | 2500 | N-Channel | - | 100V | 9.4A (Ta), 98A (Tc) | 9.5 mOhm @ 13A, 10V | 3.5V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | 1.2W (Ta), 139W (Tc) | ||||
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30,000
In-stock
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Texas instruments | MOSFET N-CH 60V 50A 8SON | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSONP (5x6) | 0 | 2500 | N-Channel | - | 60V | 11A (Ta), 50A (Tc) | 13 mOhm @ 12A, 10V | 3.5V @ 250µA | 18nC @ 10V | 1480pF @ 30V | 6V, 10V | ±20V | 3.2W (Ta), 75W (Tc) | ||||
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VIEW | onsemi | MOSFET 2P-CH 60V 0.34A SSOT6 | SOT-23-6 Thin, TSOT-23-6 | PowerTrench® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SuperSOT™-6 | 0 | 3000 | 2 P-Channel (Dual) | 700mW | Logic Level Gate | 60V | 340mA | 5 Ohm @ 340mA, 10V | 3.5V @ 250µA | 2.2nC @ 10V | 66pF @ 25V |
