- Package / Case :
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- Current - Continuous Drain (Id) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 6PQFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | - | 100V | 11A (Tc) | 42 mOhm @ 6.7A, 10V | 2.3V @ 10µA | 5.6nC @ 4.5V | 440pF @ 50V | 4.5V, 10V | ±20V | 11.5W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 18.5A 6PQFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | - | 60V | 18.5A (Tc) | 17 mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | 11.5W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 6.8A/4.6A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N and P-Channel | 2W | Logic Level Gate | 30V | 6.8A, 4.6A | 27 mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | ||||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 6.8A/4.6A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2W | Logic Level Gate | 30V | 6.8A, 4.6A | 27 mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V |
