- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 25V 16A S1 | DirectFET™ Isometric S1 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET S1 | 0 | 4800 | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 20W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-4 | 0 | 5000 | 2 N-Channel (Dual) | 60W | Logic Level Gate | 100V | 20A | 22 mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 100V 20A TDSON-8 | 8-PowerVDFN | OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-10 | 0 | 5000 | 2 N-Channel (Dual) | 60W | Logic Level Gate | 100V | 20A | 22 mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V |
