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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 5.4A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 30V | 5.4A (Ta) | 59 mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | 386pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 5.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 30V | 5.4A (Ta) | 59 mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | 386pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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GET PRICE |
270,000
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 2.3A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | P-Channel | - | 30V | 2.3A (Ta) | 165 mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | ||||
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18,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | 1.3W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN Dual (2x2) | 0 | 1 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-VQFN Exposed Pad | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V |