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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 30A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel   - 40V 30A (Tc) 17 mOhm @ 30A, 10V 4V @ 10µA 11nC @ 10V 880pF @ 20V 10V ±20V 31W (Tc)
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Per Unit
$0.304
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Infineon Technologies MOSFET N-CH 40V 31A TSDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel   - 40V 8.9A (Ta), 31A (Tc) 16.5 mOhm @ 20A, 10V 4V @ 10µA 10nC @ 10V 840pF @ 20V 10V ±20V 2.1W (Ta), 25W (Tc)
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Infineon Technologies MOSFET 2N-CH 100V 2.3A 8PQFN 8-PowerVDFN HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (3.3x3.3), Power33 0 1 2 N-Channel (Dual) 2.3W Standard 100V 2.3A 195 mOhm @ 2.9A, 10V 4V @ 10µA 6.3nC @ 10V 251pF @ 25V      
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Per Unit
$0.926
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Infineon Technologies MOSFET 2N-CH 100V 2.3A 8PQFN 8-PowerVDFN HEXFET® Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (3.3x3.3), Power33 0 4000 2 N-Channel (Dual) 2.3W Standard 100V 2.3A 195 mOhm @ 2.9A, 10V 4V @ 10µA 6.3nC @ 10V 251pF @ 25V      
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