- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 80A (Tc) | 5.1 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 10V | ±20V | 165W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | 156W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 3-WDSON | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | MG-WDSON-2, CanPAK M™ | 0 | 5000 | N-Channel | - | 150V | 9A (Ta), 45A (Tc) | 16.5 mOhm @ 30A, 10V | 4V @ 110µA | 35nC @ 10V | 2800pF @ 75V | 8V, 10V | ±20V | 2.8W (Ta), 78W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10 mOhm @ 25A, 10V | 4V @ 110µA | 44nC @ 10V | 2900pF @ 50V | 10V | ±20V | 156W (Tc) | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | 158W (Tc) | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7-3 | 0 | 1000 | N-Channel | - | 40V | 160A (Tc) | 1.6 mOhm @ 100A, 10V | 4V @ 110µA | 137nC @ 10V | 10920pF @ 25V | 10V | ±20V | 167W (Tc) |
