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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 90A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel - 40V 90A (Tc) 3.8 mOhm @ 90A, 10V 4V @ 45µA 56nC @ 10V 4500pF @ 20V 10V ±20V 94W (Tc)
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Infineon Technologies MOSFET N-CH 40V 80A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) 0 1000 N-Channel - 40V 80A (Tc) 4.1 mOhm @ 80A, 10V 4V @ 45µA 56nC @ 10V 4500pF @ 20V 10V ±20V 94W (Tc)
BSC360N15NS3G ATMA1
Per Unit
$0.750
RFQ
6,560
In-stock
Infineon Technologies MOSFET N-CH 150V 33A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 150V 33A (Tc) 36 mOhm @ 25A, 10V 4V @ 45µA 15nC @ 10V 1190pF @ 75V 8V, 10V ±20V 74W (Tc)
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