- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 30A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | 0 | 0 | 2500 | N-Channel | - | 40V | 30A (Tc) | 17 mOhm @ 30A, 10V | 4V @ 10µA | 11nC @ 10V | 880pF @ 20V | 10V | ±20V | 31W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 1.5A SOT-223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | 0 | 0 | 2500 | N-Channel | - | 55V | 1.5A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 800V 4.5A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ P7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 0 | 2500 | N-Channel | - | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | 37W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N CH 400V 2A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SuperMESH3™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 0 | 2500 | N-Channel | - | 400V | 2A (Tc) | 3.4 Ohm @ 900mA, 10V | 4.5V @ 50µA | 11nC @ 10V | 165pF @ 50V | 10V | ±30V | 30W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | 0 | 0 | 2500 | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | 31W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | 0 | 0 | 2500 | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | 31W (Tc) | ||||
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2,500
In-stock
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onsemi | MOSFET N-CH 60V 5.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252-3 | 0 | 0 | 2500 | N-Channel | - | 60V | 5.4A (Ta) | 55 mOhm @ 5.4A, 10V | 3V @ 250µA | 11nC @ 10V | 660pF @ 30V | 6V, 10V | ±20V | 3.8W (Ta), 42W (Tc) | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 0 | 2500 | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Diodes Incorporated | MOSFET 2P-CH 30V 3.9A 8SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 0 | 2500 | 2 P-Channel (Dual) | 1.1W | Logic Level Gate | 30V | 3.9A | 70 mOhm @ 5.3A, 10V | 3V @ 250µA | 11nC @ 10V | 563pF @ 25V | |||||||
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2,500
In-stock
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onsemi | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench®, SyncFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 85000 | 0 | 2500 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 30V | 5.5A, 8.5A | 31 mOhm @ 5.5A, 10V | 3V @ 250µA | 11nC @ 10V | 420pF @ 15V |
