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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 27A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 0 2500 N-Channel   - 100V 27A (Tc) 33 mOhm @ 27A, 10V 4V @ 29µA 24nC @ 10V 1570pF @ 50V 10V ±20V 58W (Tc)
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Infineon Technologies MOSFET N-CH 100V 27A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) 0 0 1000 N-Channel   - 100V 27A (Tc) 34 mOhm @ 27A, 10V 4V @ 29µA 24nC @ 10V 1570pF @ 50V 10V ±20V 58W (Tc)
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Per Unit
$0.464
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Infineon Technologies MOSFET N-CH 100V 27A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3 0 0 2500 N-Channel   - 100V 27A (Tc) 33 mOhm @ 27A, 10V 4V @ 29µA 24nC @ 10V 1570pF @ 50V 10V ±20V 58W (Tc)
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Per Unit
$1.114
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onsemi MOSFET 2N-CH 100V 7A 6-MLP 12-PowerWDFN PowerTrench® Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 12-Power3.3x5 27000 0 3000 2 N-Channel (Dual) 1W Logic Level Gate 100V 7A 19.5 mOhm @ 7A, 10V 3V @ 250µA 24nC @ 10V 1585pF @ 50V      
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