- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 30V 5.4A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 30V | 5.4A (Ta) | 59 mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | 386pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
|
|
GET PRICE |
7,000
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 2320 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4085 | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
|
|
56,000
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 30V 3A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | Micro3™/SOT-23 | 0 | 95 | P-Channel | - | 30V | 3A (Ta) | 98 mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 6.8A/4.6A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N and P-Channel | 2W | Logic Level Gate | 30V | 6.8A, 4.6A | 27 mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | ||||||||
|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 3.5A/2.3A 8SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N and P-Channel | 2W | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | |||||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 30V 3.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 30V | 3.5A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | ||||||||
|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N and P-Channel | 2W | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | ||||||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 30V 3.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 30V | 3.5A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | |||||||
|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N and P-Channel | 2W | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V |
