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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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9,600
In-stock
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Infineon Technologies | MOSFET N-CH 20V 30A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 20V | 30A (Ta), 150A (Tc) | 2.2 mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | 5040pF @ 10V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 30A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 20V | 30A (Ta), 150A (Tc) | 2.2 mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | 5040pF @ 10V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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7,000
In-stock
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Infineon Technologies | MOSFET N-CH 20V 30A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 1000 | N-Channel | - | 20V | 30A (Ta), 150A (Tc) | 2.2 mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | 5040pF @ 10V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 20V 30A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 1000 | N-Channel | - | 20V | 30A (Ta), 150A (Tc) | 2.2 mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | 5040pF @ 10V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 12V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 12V | 9.2A | 17 mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V | |||||||
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20
In-stock
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Infineon Technologies | MOSFET 2P-CH 12V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 12V | 9.2A | 17 mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V |
