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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 33A D2-PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 500 N-Channel - 150V 33A (Tc) 42 mOhm @ 21A, 10V 5V @ 100µA 40nC @ 10V 1750pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET P-CH 30V 4.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 4.6A (Ta) 70 mOhm @ 4.6A, 10V 3V @ 250µA 40nC @ 10V 870pF @ 10V 4.5V, 10V ±20V 2.5W (Tc)
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Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - Obsolete 8-SO 0 4000 P-Channel - 20V 4.3A (Ta) 100 mOhm @ 2A, 10V - 40nC @ 10V 750pF @ 20V - - -
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Per Unit
$0.313
RFQ
12,000
In-stock
Infineon Technologies MOSFET P-CH 30V 4.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel - 30V 4.6A (Ta) 70 mOhm @ 4.6A, 10V 3V @ 250µA 40nC @ 10V 870pF @ 10V 4.5V, 10V ±20V 2.5W (Tc)
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