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Part Status :
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.518
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RFQ
STMicroelectronics MOSFET N-CH 650V 12A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ V Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active DPAK 0 2500 N-Channel - 650V 12A (Tc) 299 mOhm @ 6A, 10V 5V @ 250µA 45nC @ 10V 1250pF @ 100V 10V ±25V 90W (Tc)
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Per Unit
$0.620
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RFQ
Infineon Technologies MOSFET N-CH 150V 24A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 150V 24A (Tc) 95 mOhm @ 14A, 10V 5V @ 250µA 45nC @ 10V 890pF @ 25V 10V ±30V 140W (Tc)
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Per Unit
$1.870
RFQ
2,336
In-stock
Infineon Technologies MOSFET N-CH 150V 24A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 150V 24A (Tc) 95 mOhm @ 14A, 10V 5V @ 250µA 45nC @ 10V 890pF @ 25V 10V ±30V 140W (Tc)
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