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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 2000 N-Channel   - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 1000 N-Channel   - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.414
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Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel   - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.278
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Diodes Incorporated MOSFET N/P-CH 30V 8.5A/7A 8-SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 N and P-Channel 2.5W Logic Level Gate 30V 8.5A, 7A 21 mOhm @ 7A, 10V 2.1V @ 250µA 16.1nC @ 10V 767pF @ 10V      
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Per Unit
$0.229
RFQ
2,500
In-stock
Diodes Incorporated MOSFET N/P-CH 30V 8.5A/7A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 N and P-Channel 2.5W Logic Level Gate 30V 8.5A, 7A 21 mOhm @ 7A, 10V 2.1V @ 250µA 16.1nC @ 10V 767pF @ 10V      
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