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- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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5,000
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STMicroelectronics | MOSFET N-CH 800V 3A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SuperMESH™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 800V | 3A (Tc) | 3.5 Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.5nC @ 10V | 575pF @ 25V | 10V | ±30V | 80W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 60V 3.1A/2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | SIPMOS® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-DSO-8 | 0 | 2500 | N and P-Channel | 2W | Logic Level Gate | 60V | 3.1A, 2A | 110 mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 60V 3.1A/2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | SIPMOS® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-DSO-8 | 0 | 2500 | N and P-Channel | 2W | Logic Level Gate | 60V | 3.1A, 2A | 110 mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V |
