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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Texas instruments MOSFET P-CH 20V 4A 9DSBGA 9-UFBGA, DSBGA NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 9-DSBGA 0 3000 P-Channel   - 20V 4A (Ta) 40 mOhm @ 2A, 4.5V 1.1V @ 250µA 5.6nC @ 4.5V 510pF @ 10V 1.8V, 4.5V -6V 1.5W (Ta)
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Per Unit
$0.464
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Infineon Technologies MOSFET N-CH 100V 6PQFN 6-VDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 6-PQFN (2x2) 0 4000 N-Channel   - 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V 11.5W (Tc)
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Per Unit
$0.430
RFQ
2,500
In-stock
Texas instruments MOSFET N-CH 25V 60A 8-SON 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-VSONP (5x6) 0 2500 N-Channel   - 25V 15A (Ta), 60A (Tc) 8.2 mOhm @ 17A, 10V 2.3V @ 250µA 5.6nC @ 4.5V 800pF @ 12.5V 4.5V, 10V +16V, -12V 2.6W (Ta)
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Per Unit
$0.114
RFQ
32,000
In-stock
onsemi MOSFET P-CH 20V 0.86A SOT-563 SOT-563, SOT-666 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-563 0 4000 P-Channel   - 20V 860mA (Ta) 150 mOhm @ 950mA, 4.5V 1V @ 250µA 5.6nC @ 4.5V 458pF @ 16V 1.8V, 4.5V ±8V 170mW (Ta)
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Per Unit
$0.544
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Infineon Technologies DIFFERENTIATED MOSFETS 8-PowerVDFN OptiMOS™ Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active PG-WISON-8 0 5000 2 N-Channel (Dual) 1.9W (Ta), 31W (Tc) Logic Level Gate, 4.5V Drive 30V 9.5A (Ta), 25A (Tc) 9.5 mOhm @ 9A, 10V 2V @ 250µA 5.6nC @ 4.5V 800pF @ 15V      
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