- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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750
In-stock
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Texas instruments | CSD16327Q3T | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSON-CLIP (3.3x3.3) | 0 | 250 | N-Channel | - | 25V | 60A (Tc) | 4 mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | 1300pF @ 12.5V | 3V, 8V | +10V, -8V | 74W (Tc) | ||||
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6,000
In-stock
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Texas instruments | MOSFET P-CH 8V 10A 9DSBGA | 9-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9-DSBGA | 0 | 3000 | P-Channel | - | 8V | 10A (Ta) | 12.2 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 8.4nC @ 4.5V | 1390pF @ 4V | 2.5V, 4.5V | -6V | 1.5W (Ta) | ||||
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10,000
In-stock
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Texas instruments | MOSFET N-CH 25V 60A 8SON | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSON-CLIP (3.3x3.3) | 0 | 2500 | N-Channel | - | 25V | 60A (Tc) | 4 mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | 1300pF @ 12.5V | 3V, 8V | +10V, -8V | 3W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 25V 19A/39A 8TISON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 155°C (TJ) | Active | PG-TISON-8 | 0 | 5000 | 2 N-Channel (Dual) Asymmetrical | 2.5W | Logic Level Gate, 4.5V Drive | 25V | 19A, 39A | 3 mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1040pF @ 12V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 25V 19A/33A 8TISON | 8-PowerTDFN | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 155°C (TJ) | Active | PG-TISON-8 | 0 | 5000 | 2 N-Channel (Dual) Asymmetrical | 2.5W | Logic Level Gate, 4.5V Drive | 25V | 19A, 33A | 3 mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | |||||||
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VIEW | Diodes Incorporated | MOSFET 4 N-CH 14.8A VDFN5045-12 | 12-VDFN Exposed Pad | Automotive, AEC-Q101 | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | V-DFN5045-12 | 0 | 3000 | 4 N-Channel | - | Standard | - | 14.8A (Ta) | 22 mOhm @ 10A, 10V | 3V @ 250µA | 8.4nC @ 4.5V | 864pF @ 30V |
