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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1235 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Texas instruments | MOSFET N-CH 12V 1.6A 4-DSBGA | 4-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4-DSBGA (1x1) | 0 | 2750 | N-Channel | - | 12V | 1.6A (Ta) | 17.1 mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8nC @ 4.5V | 862pF @ 6V | 2.5V, 4.5V | ±10V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | ||||
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6,000
In-stock
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Texas instruments | MOSFET N-CH 12V 1.6A | 4-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4-DSBGA | 0 | 3000 | N-Channel | - | 12V | 1.6A (Ta) | 17.1 mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8nC @ 4.5V | 862pF @ 6V | 2.5V, 4.5V | ±10V | 1.8W (Ta) | ||||
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VIEW | onsemi | MOSFET 2P-CH 20V 2.2A 6WDFN | 6-WDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-WDFN (2x2) | 0 | 3000 | 2 P-Channel (Dual) | 710mW | Logic Level Gate | 20V | 2.2A | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 7.8nC @ 4.5V | 450pF @ 10V | |||||||
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VIEW | onsemi | MOSFET 2P-CH 20V 2.2A 6WDFN | 6-WDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-WDFN (2x2) | 0 | 3000 | 2 P-Channel (Dual) | 710mW | Logic Level Gate | 20V | 2.2A | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 7.8nC @ 4.5V | 450pF @ 10V | |||||||
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VIEW | Texas instruments | MOSFET 2N-CH 20V 5A | 4-XFLGA | NexFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4-Picostar (1.31x1.31) | 0 | 3000 | 2 N-Channel (Dual) Common Drain | 1.7W | Standard | - | - | - | - | 7.8nC @ 4.5V | - | |||||||
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VIEW | Texas instruments | MOSFET 2N-CH | 4-XFLGA | NexFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4-Picostar (1.31x1.31) | 0 | 250 | 2 N-Channel (Dual) Common Drain | 1.7W | Standard | - | - | - | - | 7.8nC @ 4.5V | - |
