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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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$0.666
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STMicroelectronics MOSFET N-CHANNEL 800V 3A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ K5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel   - 800V 3A (Tc) 2.6 Ohm @ 1A, 10V 5V @ 100µA 3.7nC @ 10V 122pF @ 100V 10V ±30V 60W (Tc)
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onsemi MOSFET 2N-CH 450V 0.7A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount 150°C (TJ) Obsolete 8-SOIC 0 2500 2 N-Channel (Dual) 1.6W Logic Level Gate 450V 700mA 12.1 Ohm @ 350mA, 10V 4.5V @ 1mA 3.7nC @ 10V 55pF @ 20V      
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Infineon Technologies MOSFET 2P-CH 30V 2.3A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN Dual (2x2) 0 1 2 P-Channel (Dual) 1.4W Logic Level Gate 30V 2.3A 170 mOhm @ 3.1A, 10V 2.4V @ 10µA 3.7nC @ 10V 160pF @ 25V      
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Per Unit
$0.285
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Infineon Technologies MOSFET 2P-CH 30V 2.3A PQFN 6-VQFN Exposed Pad HEXFET® Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 6-PQFN (2x2) 0 4000 2 P-Channel (Dual) 1.4W Logic Level Gate 30V 2.3A 170 mOhm @ 3.1A, 10V 2.4V @ 10µA 3.7nC @ 10V 160pF @ 25V      
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