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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 25V 15A 8VQFN 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 25V 15A (Ta), 51A (Tc) 6 mOhm @ 15A, 10V 2.35V @ 25µA 14.5nC @ 10V 988pF @ 13V 4.5V, 10V ±20V 3.6W (Ta), 26W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 25V 15A 8VQFN 8-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 4000 N-Channel - 25V 15A (Ta), 51A (Tc) 6 mOhm @ 15A, 10V 2.35V @ 25µA 14.5nC @ 10V 988pF @ 13V 4.5V, 10V ±20V 3.6W (Ta), 26W (Tc)
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Per Unit
$0.617
RFQ
32,750
In-stock
Texas instruments 60V N-CHANNEL NEXFET POWER MOSF 8-PowerVDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-VSON (3.3x3.3) 0 250 N-Channel - 60V 12A (Ta), 60A (Tc) 15.6 mOhm @ 12A, 4.5V 2.7V @ 250µA 14.5nC @ 10V 1150pF @ 30V 4.5V, 10V ±20V 66W (Tc)
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