- Manufacture :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 1.7 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14560pF @ 25V | 4.5V, 10V | +20V, -16V | 158W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7-3 | 0 | 1000 | N-Channel | - | 40V | 160A (Tc) | 1.5 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14950pF @ 25V | 4.5V, 10V | +20V, -16V | 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | 0 | 4000 | N-Channel | - | 40V | 100A (Tc) | 1.25 mOhm @ 100A, 10V | 3.9V @ 150µA | 190nC @ 10V | 6560pF @ 25V | 10V | ±20V | 156W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 55V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 55V | 120A (Tc) | 6 mOhm @ 60A, 10V | 4V @ 250µA | 190nC @ 10V | 4400pF @ 25V | 10V | ±20V | 300W (Tc) |
