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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 70A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | 0 | 2500 | P-Channel | 30V | 70A (Tc) | 6.8 mOhm @ 70A, 10V | 2V @ 150µA | 91nC @ 10V | 7720pF @ 15V | 4.5V, 10V | ±20V | 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | 100V | 120A (Tc) | 5 mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | 6540pF @ 25V | 10V | ±20V | 190W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 70A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | P-Channel | 30V | 70A (Tc) | 6.8 mOhm @ 70A, 10V | 2V @ 150µA | 91nC @ 10V | 7720pF @ 15V | 4.5V, 10V | ±20V | 100W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N CH 650V 35A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MDmesh™ V | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | 650V | 35A (Tc) | 78 mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | 3375pF @ 100V | 10V | ±25V | 210W (Tc) | |||
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44
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | ||||
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2,400
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET P-CH 40V 50A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252 | 0 | 2500 | P-Channel | 40V | 15A (Ta), 50A (Tc) | 9.9 mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | 4234pF @ 20V | 4.5V, 10V | ±25V | 1.7W (Ta) |
