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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 400V 170MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 2000 N-Channel 400V 170mA (Ta) 25 Ohm @ 170mA, 10V 2.3V @ 94µA 5.9nC @ 10V 154pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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RFQ
Infineon Technologies MOSFET N-CH 400V 170MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 1000 N-Channel 400V 170mA (Ta) 25 Ohm @ 170mA, 10V 2.3V @ 94µA 5.9nC @ 10V 154pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.331
VIEW
RFQ
Infineon Technologies MOSFET N-CH 400V 170MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel 400V 170mA (Ta) 25 Ohm @ 170mA, 10V 2.3V @ 94µA 5.9nC @ 10V 154pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.326
RFQ
11,000
In-stock
Diodes Incorporated MOSFET P-CH 60V 1.7A SOT223 TO-261-4, TO-261AA - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 1000 P-Channel 60V 1.7A (Ta) 390 mOhm @ 900mA, 10V 1V @ 250µA 5.9nC @ 10V 219pF @ 30V 4.5V, 10V ±20V 2W (Ta)
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