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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 59A D2PAK-5 TO-263-6, D²Pak (5 Leads + Tab), TO-263BA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete TO-263-5 0 800 N-Channel 40V 59A (Tc) 18 mOhm @ 35A, 10V 2V @ 250µA 50nC @ 5V 2190pF @ 25V 5V, 10V ±10V 130W (Tc)
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Infineon Technologies MOSFET N-CH 30V 89A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D-PAK 0 2000 N-Channel 30V 89A (Ta) 7 mOhm @ 15A, 10V 2V @ 250µA (Min) 50nC @ 5V - 4.5V, 10V ±20V 89W (Tc)
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Infineon Technologies MOSFET N-CH 30V 89A D-PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete D-PAK 0 75 N-Channel 30V 89A (Ta) 7 mOhm @ 15A, 10V 2V @ 250µA (Min) 50nC @ 5V - 4.5V, 10V ±20V 89W (Ta)
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