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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 8.8A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TSDSON-6 0 1 N-Channel - 30V 8.8A (Ta), 19A (Tc) 16 mOhm @ 8.5A, 10V 2.35V @ 25µA 8.7nC @ 10V 600pF @ 25V 4.5V, 10V ±20V 2.1W (Ta)
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Per Unit
$0.522
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RFQ
Infineon Technologies MOSFET N-CH 200V 11.3A 8TSDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V 50W (Tc)
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Per Unit
$0.521
VIEW
RFQ
Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V 50W (Tc)
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Per Unit
$0.175
RFQ
4,000
In-stock
Infineon Technologies MOSFET N-CH 30V 8.8A PQFN 6-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-6 0 4000 N-Channel - 30V 8.8A (Ta), 19A (Tc) 16 mOhm @ 8.5A, 10V 2.35V @ 25µA 8.7nC @ 10V 600pF @ 25V 4.5V, 10V ±20V 2.1W (Ta)
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