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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 10A 5X6 PQFN 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 100V 10A (Ta), 55A (Tc) 14.9 mOhm @ 33A, 10V 4V @ 100µA 59nC @ 10V 2570pF @ 25V 10V ±20V 3.6W (Ta), 104W (Tc)
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Infineon Technologies MOSFET N-CH 75V 5X6 PQFN 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 75V 13A (Ta), 71A (Tc) 9.6 mOhm @ 43A, 10V 4V @ 100µA 59nC @ 10V 2474pF @ 25V 10V ±20V 3.6W (Ta), 105W (Tc)
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Per Unit
$1.970
RFQ
2,282
In-stock
Infineon Technologies MOSFET N CH 100V 35A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DPAK 0 1 N-Channel - 100V 35A (Tc) 28.5 mOhm @ 21A, 10V 4V @ 50µA 59nC @ 10V 1690pF @ 25V 10V ±20V 91W (Tc)
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