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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 24A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 24A (Ta) | 2.8 mOhm @ 24A, 10V | 2.35V @ 100µA | 66nC @ 4.5V | 5720pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 10A DIRECTFET | DirectFET™ Isometric M4 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET™ M4 | 0 | 4800 | N-Channel | - | 100V | 10A (Ta) | 10 mOhm @ 31A, 10V | 2.5V @ 150µA | 66nC @ 4.5V | 5305pF @ 25V | 4.5V, 10V | ±16V | 2.5W (Ta), 62.5W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 24A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 24A (Ta) | 2.8 mOhm @ 24A, 10V | 2.35V @ 100µA | 66nC @ 4.5V | 5720pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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STMicroelectronics | MOSFET N-CH 60V 60A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -65°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 60V | 60A (Tc) | 14 mOhm @ 30A, 10V | 1V @ 250µA | 66nC @ 4.5V | 2000pF @ 25V | 5V, 10V | ±15V | 110W (Tc) |
