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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 1 N-Channel - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - D2PAK 0 0 N-Channel - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET P-CH 12V 9.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1045 P-Channel - 12V 9.5A (Ta) 20 mOhm @ 9.5A, 4.5V 600mV @ 250µA 74nC @ 5V 6000pF @ 10V 2.5V, 4.5V ±12V 2.5W (Ta)
IRF7233TRPBF
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8,966
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Infineon Technologies MOSFET P-CH 12V 9.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 P-Channel - 12V 9.5A (Ta) 20 mOhm @ 9.5A, 4.5V 600mV @ 250µA 74nC @ 5V 6000pF @ 10V 2.5V, 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 700 N-Channel - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET P-CH 12V 9.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 P-Channel - 12V 9.5A (Ta) 20 mOhm @ 9.5A, 4.5V 600mV @ 250µA 74nC @ 5V 6000pF @ 10V 2.5V, 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 12V 9.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 P-Channel - 12V 9.5A (Ta) 20 mOhm @ 9.5A, 4.5V 600mV @ 250µA 74nC @ 5V 6000pF @ 10V 2.5V, 4.5V ±12V 2.5W (Ta)
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Per Unit
$1.068
RFQ
2,400
In-stock
Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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