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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 55A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1000 N-Channel - 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 160A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 300 N-Channel - 40V 160A (Tc) 4 mOhm @ 95A, 10V 3V @ 250µA 140nC @ 5V 6600pF @ 25V 4.3V, 10V ±20V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 160A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel - 40V 160A (Tc) 4 mOhm @ 95A, 10V 3V @ 250µA 140nC @ 5V 6600pF @ 25V 4.3V, 10V ±20V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 100V 55A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Per Unit
$2.374
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Infineon Technologies MOSFET N-CH 40V 160A D2PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Last Time Buy D-PAK (TO-252AA) 0 800 N-Channel - 40V 160A (Tc) 4 mOhm @ 95A, 10V 3V @ 250µA 140nC @ 5V 6600pF @ 25V 4.3V, 10V ±20V 3.8W (Ta), 200W (Tc)
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Per Unit
$1.733
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Infineon Technologies MOSFET N-CH 100V 55A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - Active D2PAK 0 800 N-Channel - 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V - - -
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Per Unit
$1.567
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Infineon Technologies MOSFET N-CH 40V 160A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 40V 160A (Tc) 4 mOhm @ 95A, 10V 3V @ 250µA 140nC @ 5V 6600pF @ 25V 4.3V, 10V ±20V 3.8W (Ta), 200W (Tc)
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Per Unit
$1.932
RFQ
800
In-stock
Infineon Technologies MOSFET N-CH 100V 55A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V 3.8W (Ta), 200W (Tc)
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