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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 3000 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 15A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 20V | 15A (Ta) | 8.2 mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | 7980pF @ 15V | 2.5V, 4.5V | ±12V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 15A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | - | 20V | 15A (Ta) | 8.2 mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | 7980pF @ 15V | 2.5V, 4.5V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 15A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 285 | P-Channel | - | 20V | 15A (Ta) | 8.2 mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | 7980pF @ 15V | 2.5V, 4.5V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) |