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- FET Feature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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10,000
In-stock
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Texas instruments | MOSFET N-CH 30V 65A 8SON | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | 8-VSONP (5x6) | 0 | 2500 | N-Channel | - | 30V | 13A (Ta), 65A (Tc) | 10.8 mOhm @ 11A, 10V | 2.1V @ 250µA | 3.6nC @ 4.5V | 530pF @ 15V | 4.5V, 10V | ±20V | 3W (Ta) | ||||
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VIEW | onsemi | MOSFET 2P-CH 30V/12V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 2500 | 2 P-Channel (Dual) | 900mW | Logic Level Gate | 30V, 12V | 4.3A, 6.8A | 55 mOhm @ 4.3A, 10V | 3V @ 250µA | 7.7nC @ 5V | 530pF @ 15V | |||||||
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6,000
In-stock
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onsemi | MOSFET 2P-CH 30V 2.9A MICROFET6 | 6-VDFN Exposed Pad | PowerTrench® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-MicroFET (2x2) | 0 | 3000 | 2 P-Channel (Dual) | 700mW | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 530pF @ 15V |
