- Manufacture :
- Packaging :
- Operating Temperature :
- Part Status :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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7,500
In-stock
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STMicroelectronics | MOSFET N-CH 500V 5.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SuperMESH™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | DPAK | 0 | 2500 | N-Channel | - | 500V | 5.6A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 24.6nC @ 10V | 690pF @ 25V | 10V | ±30V | 90W (Tc) | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-CH 60V 24A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 60V | 24A (Tc) | 40 mOhm @ 12A, 10V | 4V @ 250µA | 31nC @ 10V | 690pF @ 25V | 10V | ±20V | 60W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 475 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q101, HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | |||||||
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3,451
In-stock
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Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V |
