- Manufacture :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
21 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1045 | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 3000 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||||
|
289
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | ||||||
|
VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | |||||
|
2,581
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | ||||||
|
12,000
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||||
|
7,000
In-stock
|
onsemi | MOSFET N-CH 60V 3A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | SOT-223 | 0 | 1000 | N-Channel | - | 60V | 3A (Ta) | 120 mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | 5V | ±15V | 1.3W (Ta) | |||||
|
35,000
In-stock
|
onsemi | MOSFET N-CH 60V 3A SOT223 | TO-261-4, TO-261AA | Automotive, AEC-Q101 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | SOT-223 | 0 | 1000 | N-Channel | - | 60V | 3A (Ta) | 120 mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | 5V | ±15V | 1.3W (Ta) | |||||
|
27,500
In-stock
|
onsemi | MOSFET N-CH 60V 12A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 60V | 12A (Ta) | 104 mOhm @ 6A, 5V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 5V | ±15V | 1.5W (Ta), 48W (Tj) | |||||
|
7,200
In-stock
|
Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Standard | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | ||||||||
|
VIEW | Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | |||||||||
|
16,000
In-stock
|
Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | ||||||||
|
4,000
In-stock
|
Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V |