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- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 2080 | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 1.5A SOT-223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 1.5A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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87,000
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 1.8A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | N-Channel | - | 30V | 1.8A (Ta) | 120 mOhm @ 2.5A, 10V | 1V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 4.5V, 10V | ±20V | 625mW (Ta) | ||||
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573
In-stock
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Diodes Incorporated | MOSFET N/P-CH 30V 2.9A/2.1A 8MLP | 8-VDFN Exposed Pad | - | Cut Tape (CT) | Surface Mount | - | Active | 8-MLP (3x3) | 0 | 1 | N and P-Channel | 1.7W | Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.9nC @ 10V | 190pF @ 25V | |||||||
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VIEW | Diodes Incorporated | MOSFET N/P-CH 30V 2.9A/2.1A 8DFN | 8-WDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-DFN (3x2) | 3000 | 3000 | N and P-Channel | 1.7W | Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | |||||||
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VIEW | Diodes Incorporated | MOSFET 2N-CH 30V 2.9A 8MLP | 8-VDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-MLP (3x2) | 0 | 3000 | 2 N-Channel (Dual) | 1.13W | Logic Level Gate | 30V | 2.9A | 120 mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.9nC @ 10V | 190pF @ 25V | |||||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 2N-CH 30V 2.9A DFN | 8-WDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-DFN (3x2) | 6000 | 3000 | 2 N-Channel (Dual) | 1.7W | Logic Level Gate | 30V | 2.9A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | |||||||
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5,000
In-stock
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Diodes Incorporated | MOSFET 2N/2P-CH 30V 2.7A/2A SM8 | SOT-223-8 | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SM8 | 0 | 1000 | 2 N and 2 P-Channel (H-Bridge) | 1.3W | Logic Level Gate | 30V | 2.7A, 2A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | |||||||
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5,000
In-stock
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Diodes Incorporated | MOSFET 2N/2P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOP | 0 | 2500 | 2 N and 2 P-Channel (H-Bridge) | 870mW | Logic Level Gate | 30V | 2.17A, 1.64A | 125 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V |
