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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 2000 | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 4000 | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2560 | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2500 | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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GET PRICE |
270,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2.3A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | P-Channel | - | 30V | 2.3A (Ta) | 165 mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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4,000
In-stock
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STMicroelectronics | MOSFET N-CH 800V 0.25A SOT223 | TO-261-4, TO-261AA | SuperMESH™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | N-Channel | - | 800V | 250mA (Tc) | 16 Ohm @ 500mA, 10V | 4.5V @ 50µA | 7.7nC @ 10V | 160pF @ 25V | 10V | ±30V | 2.5W (Tc) | ||||
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15,000
In-stock
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STMicroelectronics | MOSFET N-CH 800V 1A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SuperMESH™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 800V | 1A (Tc) | 16 Ohm @ 500mA, 10V | 4.5V @ 50µA | 7.7nC @ 10V | 160pF @ 25V | 10V | ±30V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN Dual (2x2) | 0 | 1 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-VQFN Exposed Pad | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | |||||||
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12,500
In-stock
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STMicroelectronics | MOSFET 2N-CH 450V 0.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | SuperMESH™ | Tape & Reel (TR) | Surface Mount | 150°C (TJ) | Active | 8-SO | 0 | 2500 | 2 N-Channel (Dual) | 1.6W | Standard | 450V | 400mA | 4.5 Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | 160pF @ 25V |
