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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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$0.157
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RFQ
Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type B) 0 10000 2 N-Channel (Dual) 730mW Logic Level Gate 20V 3.3A 45 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V
Default Photo
VIEW
RFQ
Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type B) 0 3000 2 N-Channel (Dual) 730mW Logic Level Gate 20V 3.3A 45 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V
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