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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.287
RFQ
81,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 750MA DFN 3-XFDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active X2-DFN1006-3 540000 0 3000 N-Channel   - 30V 750mA (Ta) 460 mOhm @ 200mA, 4.5V 950mV @ 250µA 1.6nC @ 4.5V 64.3pF @ 25V 1.8V, 4.5V ±8V 470mW (Ta)
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Per Unit
$0.066
RFQ
210,000
In-stock
Diodes Incorporated MOSFET N-CH 20V 1.3A 3DFN 3-XFDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active X2-DFN1006-3 1810000 0 10000 N-Channel   - 20V 1.3A (Ta) 175 mOhm @ 300mA, 4.5V 950mV @ 250µA 1.6nC @ 4.5V 64.3pF @ 25V 1.5V, 4.5V ±8V 500mW (Ta)
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RFQ
Diodes Incorporated MOSFET 2N-CH 20V 2.11A 6DFN 6-XFDFN Exposed Pad - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active X2-DFN1310-6 15000 0 3000 2 N-Channel (Dual) 530mW Logic Level Gate 20V 2.11A 195 mOhm @ 300mA, 4.5V 950mV @ 250µA 1.6nC @ 4.5V 64.3pF @ 25V      
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