- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | 0 | 2500 | N-Channel | - | 30V | 30A (Tc) | 6.7 mOhm @ 30A, 10V | 2V @ 85µA | 68nC @ 10V | 1900pF @ 25V | 4.5V, 10V | ±20V | 136W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK-5 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 450 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | - | D2PAK | 0 | 0 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 3.8W (Ta), 160W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | 125W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 3.8W (Ta), 160W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 3.8W (Ta), 160W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 250 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | 125W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-11 | 0 | 2500 | N-Channel | - | 30V | 50A (Tc) | 6.4 mOhm @ 50A, 10V | 2V @ 85µA | 68nC @ 10V | 1900pF @ 25V | 4.5V, 10V | ±20V | 136W (Tc) | |||
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13,600
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 3.8W (Ta), 160W (Tc) |
