- Package / Case :
- Packaging :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 63A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 450 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 6000 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 6000 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | ||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-10 | 0 | 5000 | 2 N-Channel (Dual) | 65W | Logic Level Gate | 40V | 20A | 7.2 mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-4 | 0 | 5000 | 2 N-Channel (Dual) | 65W | Logic Level Gate | 40V | 20A | 7.2 mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V |
