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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete 8-SO 0 665 N-Channel   - 150V 3.6A (Ta) 90 mOhm @ 2.2A, 10V 5.5V @ 250µA 41nC @ 10V 990pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 150V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel   - 150V 3.6A (Ta) 90 mOhm @ 2.2A, 10V 5.5V @ 250µA 41nC @ 10V 990pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 150V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 N-Channel   - 150V 3.6A (Ta) 90 mOhm @ 2.2A, 10V 5.5V @ 250µA 41nC @ 10V 990pF @ 25V 10V ±30V 2.5W (Ta)
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Per Unit
$0.649
RFQ
4,000
In-stock
Infineon Technologies MOSFET N-CH 150V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 N-Channel   - 150V 3.6A (Ta) 90 mOhm @ 2.2A, 10V 5.5V @ 250µA 41nC @ 10V 990pF @ 25V 10V ±30V 2.5W (Ta)
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Per Unit
$0.644
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Infineon Technologies MOSFET 2N-CH 8TDSON 8-PowerVDFN Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR)   Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8-10 0 5000 2 N-Channel (Dual) 43W Standard 100V 20A 36 mOhm @ 17A, 10V 3.5V @ 16µA 15nC @ 10V 990pF @ 25V      
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