- Package / Case :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 75V 76A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 800 | N-Channel | - | 75V | 76A (Tc) | 8.4 mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | 6V, 10V | ±20V | 125W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-10 | 0 | 5000 | 2 N-Channel (Dual) | 65W | Logic Level Gate | 60V | 20A | 11.2 mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-4 | 0 | 5000 | 2 N-Channel (Dual) | 65W | Logic Level Gate | 60V | 20A | 11.2 mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V |
