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- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 45A TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 45A (Tc) | 13.1 mOhm @ 26A, 10V | 2.2V @ 30µA | 75nC @ 10V | 3600pF @ 25V | 5V, 10V | ±16V | 65W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 174A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 20V | 174A (Tc) | 4 mOhm @ 104A, 10V | 4V @ 250µA | 120nC @ 10V | 3600pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 200 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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2,400
In-stock
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Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) |
