- Package / Case :
- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 4.1A DFET SB | DirectFET™ Isometric SB | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | DIRECTFET SB | 0 | 1000 | N-Channel | - | 100V | 4.1A (Ta), 14.4A (Tc) | 62 mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | 515pF @ 25V | 10V | ±20V | 2.4W (Ta), 30W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 77A DIRECTFET2 | DirectFET™ Isometric SB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | 0 | 4800 | N-Channel | - | 100V | 4.1A (Ta), 14.4A (Tc) | 62 mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | 515pF @ 25V | 10V | ±20V | 2.4W (Ta), 30W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V DIRECTFET SB | DirectFET™ Isometric SB | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | 0 | 4800 | N-Channel | - | 100V | 4.1A (Ta), 14.4A (Tc) | 62 mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | 515pF @ 25V | 10V | ±20V | 2.4W (Ta), 30W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 30V | 5.3A | 50 mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 30V | 5.3A | 50 mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V |
