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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 100A TO263-7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO263-7 0 1000 N-Channel - 60V 100A (Tc) 3.4 mOhm @ 100A, 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V 10V ±20V 167W (Tc)
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Per Unit
$0.817
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Infineon Technologies MOSFET N-CH 60V 90A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 1000 N-Channel - 60V 90A (Tc) 3.7 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 11000pF @ 30V 10V ±20V 188W (Tc)
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Per Unit
$0.974
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Infineon Technologies MOSFET N-CH 60V 100A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 60V 100A (Tc) 3.1 mOhm @ 50A, 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V 10V ±20V 2.5W (Ta), 139W (Tc)
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Per Unit
$0.768
RFQ
10,000
In-stock
Infineon Technologies MOSFET N-CH 60V 100A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 60V 100A (Tc) 3.4 mOhm @ 100A, 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V 10V ±20V 167W (Tc)
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