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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.339
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RFQ
Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 TO-261-4, TO-261AA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 4000 N-Channel - 100V 1.2A (Ta) 600 mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7nC @ 10V 152.7pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.285
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Infineon Technologies MOSFET N-CH 100V 1.4A 6TSOP SOT-23-6 Thin, TSOT-23-6 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSOP6-6 0 3000 N-Channel - 100V 1.4A (Ta) 460 mOhm @ 1.26A, 10V 1.8V @ 100µA 4nC @ 5V 152.7pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Per Unit
$0.374
RFQ
4,000
In-stock
Infineon Technologies MOSFET N-CH 100V 1.2A SOT-223 TO-261-4, TO-261AA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel - 100V 1.2A (Ta) 600 mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7nC @ 10V 152.7pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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