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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 28A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 1000 | N-Channel | - | 30V | 28A (Ta), 170A (Tc) | 2.2 mOhm @ 28A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 4700pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 3200 | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 3200 | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 28A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 30V | 28A (Ta), 170A (Tc) | 2.2 mOhm @ 28A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 4700pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 30V | 37A (Ta), 100A (Tc) | 1.1 mOhm @ 30A, 10V | 2.2V @ 250µA | 72nC @ 10V | 4700pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta), 96W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 28A MX | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 30V | 28A (Ta), 170A (Tc) | 2.2 mOhm @ 28A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | 4700pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 100W (Tc) | |||
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2,500
In-stock
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onsemi | MOSFET P-CH 30V 14.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 2500 | P-Channel | - | 30V | 14.5A (Ta) | 7.8 mOhm @ 14.5A, 10V | 3V @ 250µA | 124nC @ 10V | 4700pF @ 15V | 4.5V, 10V | ±25V | 2.5W (Ta) |
