- Manufacture :
- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
4,000
In-stock
|
Toshiba | MOSFET P-CH 20V 2A ES6 | SOT-563, SOT-666 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | ES6 (1.6x1.6) | 0 | 4000 | P-Channel | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | 500mW (Ta) | ||
|
|
|
36,000
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 0.31A 3-DFN | 3-UDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X1-DFN1212-3 | 0 | 3000 | N-Channel | 60V | 310mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 500nC @ 4.5V | 31pF @ 25V | 1.8V, 4V | ±20V | 480mW (Ta) | |||
|
|
|
75,000
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 300MA 3-DFN | 3-XFDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X2-DFN1006-3 | 0 | 3000 | N-Channel | 30V | 300mA (Ta) | 1.2 Ohm @ 100mA, 4V | 1.2V @ 250µA | - | 39pF @ 3V | 1.8V, 4V | ±10V | 350mW (Ta) |
