- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 18A PWRDI3333-8 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 44000 | 2000 | P-Channel | 20V | 18A (Ta), 40A (Tc) | 6.7 mOhm @ 15A, 4.5V | 1V @ 250µA | 156nC @ 10V | 5940pF @ 10V | 1.8V, 4.5V | ±10V | 2.3W (Ta) | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 9A 6DFN | 6-PowerUFDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X1-DFN1616-6 (Type E) | 0 | 3000 | N-Channel | 20V | 9A (Ta) | 14 mOhm @ 9A, 4.5V | 900mV @ 250µA | 21.5nC @ 4.5V | 1788pF @ 10V | 1.8V, 4.5V | ±10V | 610mW (Ta) |
