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- Operating Temperature :
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- FET Type :
- Vgs(th) (Max) @ Id :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 750 | N-Channel | 30V | 20A (Tc) | 45 mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | 4.5V, 10V | ±16V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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GET PRICE |
8,600
In-stock
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Infineon Technologies | MOSFET N-CH 30V 20A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | 30V | 20A (Tc) | 14.7 mOhm @ 20A, 10V | 2.2V @ 250µA | 10nC @ 10V | 1000pF @ 15V | 4.5V, 10V | ±20V | 31W (Tc) | ||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | - | D-PAK | 0 | 0 | P-Channel | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | 0 | 750 | P-Channel | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | D-PAK | 0 | 1 | P-Channel | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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14,000
In-stock
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Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 2000 | P-Channel | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET P-CH 40V 20A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252 | 0 | 2500 | P-Channel | 40V | 20A (Tc) | 45 mOhm @ 4.4A, 10V | 3V @ 250µA | 23.2nC @ 10V | 1328pF @ 20V | 4.5V, 10V | ±20V | 1.6W (Ta) | |||
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16,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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17,500
In-stock
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onsemi | MOSFET N-CH 60V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | 60V | 20A (Tc) | 39 mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | 675pF @ 25V | 4.5V, 10V | ±20V | 36W (Tc) |
